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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD856
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB761
APPLICATIONS *Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
scs .i w
VALUE 60 60 6 3 5 35
UNIT
V
.cn mi e
V
V
IC
Collector Current-Continuous
A
ICM
Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature
A
PC
W
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SD856
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 30mA; IB= 0
60
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.375A
B
1.2
V
VBE(on)
Base-Emitter On Voltage
IC= 3A; VCE= 4V
1.8
V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
B
300
A
ICES
Collector Cutoff Current
VCE= 60V; VBE= 0
200
A
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
Switching Times
ton
Turn-On Time
w w
P 120-250
scs .i w
IC= 1A; VCE= 4V
IC= 3A; VCE= 4V
.cn mi e
40 10 0.5 3.0
1
mA
250
s
IC= 1A; IB1= -IB2= 0.1A s
toff
Turn-Off Time
hFE-1 Classifications R 40-90 Q 70-150
isc Websitewww.iscsemi.cn
2


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